PtSi clustering in silicon probed by transport spectroscopy Journal Article

Author(s): Mongillo, Massimo; Spathis, Panayotis N; Katsaros, Georgios; De Franceschi, Silvano; Gentile, Pascal; Rurali, Riccardo; CartoixĂ , Xavier
Article Title: PtSi clustering in silicon probed by transport spectroscopy
Abstract: Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.
Keywords: Quantum electronics; Atomistic simulations; Characteristic size; Contact material; Discrete energies; Quantum transport; Schottky barriers; Thermal annealing process; Transport spectroscopy; Microelectronics; Scanning tunneling microscopy; Silicides
Journal Title: Physical Review X
Volume: 3
Issue 4
ISSN: 2160-3308
Publisher: American Physical Society  
Date Published: 2014-01-01
Start Page: Article number e041025
Sponsor: This work was supported by the Agence Nationale de la Recherche and by the EU through the ERC Starting Grant HybridNano
DOI: 10.1103/PhysRevX.3.041025
Open access: yes (repository)