SiGe quantum dots for fast hole spin Rabi oscillations Journal Article

Author(s): Ares, Natalia; Katsaros, Georgios; Golovach, Vitaly N; Zhang, Jianjun; Prager, Aaron A; Glazman, Leonid I; Schmidt, Oliver G; De Franceschi, Silvano
Article Title: SiGe quantum dots for fast hole spin Rabi oscillations
Abstract: We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.
Keywords: Modulation; Rabi frequency; Experimental conditions; Measurements of; Modulation techniques; Nano-devices; Rabi oscillations; Self assembled quantum dots; Spin manipulation; Semiconductor quantum dots; Silicon alloys
Journal Title: Applied Physics Letters
Volume: 103
Issue 26
ISSN: 10773118
Publisher: American Institute of Physics  
Date Published: 2013-01-23
Start Page: Article number 263113
DOI: 10.1063/1.4858959
Notes: We acknowledge the financial support from the Nanosciences Foundation (Grenoble, France), the Commission for a Marie Curie Carrer Integration Grant, the Austrian Science Fund (FWF) for a Lise-Meitner Fellowship (M1435-N30), the DOE under Contract No. DE-FG02-08ER46482 (Yale), the European Starting Grant program, and the Agence Nationale de la Recherche
Open access: yes (repository)