Multifunctional devices and logic gates with undoped silicon nanowires Journal Article

Author(s): Mongillo, Massimo; Spathis, Panayotis N; Katsaros, Georgios; Gentile, Pascal; De Franceschi, Silvano
Article Title: Multifunctional devices and logic gates with undoped silicon nanowires
Abstract: We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
Keywords: logic gates; Nanoelectronics; Schottky barrier; semiconductor nanowires; silicon transistors
Journal Title: Nano Letters
Volume: 12
Issue 6
ISSN: 1530-6992
Publisher: American Chemical Society  
Date Published: 2012-06-13
Start Page: 3074
End Page: 3079
Sponsor: This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513
DOI: 10.1021/nl300930m
Open access: yes (repository)