Observation of spin-selective tunneling in sige nanocrystals Journal Article

Author(s): Katsaros, Georgios; Golovach, Vitaly N; Spathis, Panayotis N; Ares, Natalia; Stoffel, Mathieu; Fournel, Frank; Schmidt, Oliver G; Glazman, Leonid I; De Franceschi, Silvano
Article Title: Observation of spin-selective tunneling in sige nanocrystals
Abstract: Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.
Keywords: Silicon alloys; Ferromagnetic contacts; Heavy holes; Orbital effects; Semiconductor nanostructures; SiGe nanocrystals; Spin orbit interactions; Magnetic fields; Nanocrystals
Journal Title: Physical Review Letters
Volume: 107
Issue 24
ISSN: 1079-7114
Publisher: American Physical Society  
Date Published: 2011-12-07
Start Page: Article number 246601
DOI: 10.1103/PhysRevLett.107.246601
Notes: The work was supported by the Agence Nationale de la Recherche (through the ACCESS and COHESION projects), U.S. DOE Contract No. DE-FG02-08ER46482 (Yale), and the Nanosciences Foundation at Grenoble, France. G.‚ÄČK. acknowledges support from the Deutsche Forschungsgemeinschaft
Open access: yes (repository)