Joule-assisted silicidation for short-channel silicon nanowire devices Journal Article


Author(s): Mongillo, Massimo; Spathis, Panayotis N; Katsaros, Georgios; Gentile, Pascal; Sanquer, Marc; De Franceschi, Silvano
Article Title: Joule-assisted silicidation for short-channel silicon nanowire devices
Affiliation
Keywords: Nanoelectronics; semiconductor nanowires; silicon transistors; silicidation
Journal Title: ACS Nano
Volume: 5
Issue 9
ISSN: 1936086X
Publisher: American Chemical Society  
Date Published: 2011-09-27
Start Page: 7117
End Page: 7123
Copyright Statement: We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.
Sponsor: This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513
URL:
DOI: 10.1021/nn202524j
Open access: yes (repository)
IST Austria Authors