Investigating the lateral motion of SiGe islands by selective chemical etching Journal Article


Author(s): Katsaros, Georgios; Rastelli, Armando; Stoffel, Mathieu; Isella, Giovanni; Von Känel, Hans; Bittner, Alexander M; Tersoff, Jerry; Denker, Ulrich; Schmidt, Oliver G; Costantini, Giovanni; Kern, Klaus
Article Title: Investigating the lateral motion of SiGe islands by selective chemical etching
Affiliation
Abstract: SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.
Keywords: atomic force microscopy; Silicon; morphology; Germanium; Etching; Epitaxy; Roughness and topography; Surface structure
Journal Title: Surface Science
Volume: 600
Issue 12
ISSN: 00396028
Publisher: Elsevier  
Date Published: 2006-06-15
Start Page: 2608
End Page: 2613
DOI: 10.1016/j.susc.2006.04.027
Open access: no