Kinetic origin of island intermixing during the growth of Ge on Si (001) Journal Article

Author(s): Katsaros, Georgios; Costantini, Giovanni; Stoffel, Mathieu; Esteban, Rubén; Bittner, Alexander M; Rastelli, Armando; Denker, Ulrich; Schmidt, Oliver G; Kern, Klaus
Article Title: Kinetic origin of island intermixing during the growth of Ge on Si (001)
Abstract: The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.
Journal Title: Physical Review B - Condensed Matter and Materials Physics
Volume: 72
Issue 19
ISSN: 1550-235X
Publisher: American Physical Society  
Date Published: 2005-11-15
Start Page: Article number 195320
Sponsor: G. K. acknowledges the financial support of DAAD (Deutscher Akademischer Austausch Dienst)
DOI: 10.1103/PhysRevB.72.195320
Open access: no