Al transmon qubits on silicon on insulator for quantum device integration Journal Article

Author(s): Keller Andrew J; Dieterle, Paul B; Fang, Michael; Berger, Brett; Fink, Johannes; Painter, Oskar
Article Title: Al transmon qubits on silicon on insulator for quantum device integration
Affiliation IST Austria
Abstract: We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T∗2 = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.
Journal Title: Applied Physics Letters
Volume: 111
Issue 4
ISSN: 1077-3118
Publisher: American Institute of Physics  
Date Published: 2017-07-01
Start Page: Article Number: 042603
DOI: 10.1063/1.4994661
Notes: We gratefully acknowledge the Martinis Group (UCSB/Google) for their amplifier and filter designs, Dan Vestyck for his support of our uEtch HF vapor tool, and Mark Rosamond for discussions. This work was supported by the AFOSR MURI Quantum Photonic Matter (Grant No. 16RT0696), the AFOSR MURI Wiring Quantum Networks with Mechanical Transducers (Grant No. FA9550-15-1-0015), the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center (Grant No. PHY-1125565) with the support of the Gordon and Betty Moore Foundation, and the Kavli Nanoscience Institute at Caltech. A.J.K. acknowledges the IQIM Postdoctoral Fellowship.
Open access: yes (repository)